Nd:YVO4 ndiyo inonyanya kushanda laser host crystal yekupomba diode pakati peazvino yekutengesa laser makristasi, kunyanya, kune yakaderera kusvika yepakati simba density.Izvi zvinonyanya kunyura uye emission maficha anopfuura Nd: YAG.Yakaputirwa nelaser diodes, Nd: YVO4 crystal yakaiswa nepamusoro NLO coefficient crystals (LBO, BBO, kana KTP) kuti iite frequency-kuchinja inobuda kubva padyo infrared kuenda kugirinhi, bhuruu, kana kunyange UV.Uku kubatanidzwa kwekuvaka ese akasimba state lasers yakanakira laser chishandiso chinogona kuvhara zvakanyanya kupararira maapplication emalaser, anosanganisira machining, kugadzirisa zvinhu, spectroscopy, wafer kuongorora, mwenje kuratidza, kuongororwa kwekurapa, kudhinda laser, uye kuchengetedza data, nezvimwe. yakaratidzwa kuti Nd: YVO4 based diode pumped solid state lasers ari kukurumidza kutora misika yagara ichidzorwa nemvura-yakatonhorera ion lasers uye rambi-pumped lasers, kunyanya kana compact dhizaini uye single-longitudinal-mode zvinobuda zvichidikanwa.
Nd:YVO4's zvakanakira pane Nd:YAG:
• Zvinosvika zvakapetwa kashanu kunyura kwakakura pamusoro pekupomba kwakafara bandwidth kutenderedza 808 nm (saka, kutsamira pakupomba wavelength kwakadzikira zvakanyanya uye tsika yakasimba kune imwe nzira yekubuda);
• Yakakura zvakapetwa katatu yakakura yakakurudzirwa emission cross-section pane lasing wavelength ye1064nm;
• Lower lasing pachikumbaridzo uye yakakwirira materu kushanda zvakanaka;
• Sekristaro uniaxial ine birefringence yakakura, iyo inobuda inongova mutsara wepolarized.
Laser Properties yeNd:YVO4:
• Chimiro chimwe chinokwezva zvikuru cheNd:YVO4 ndechekuti, kana ichienzaniswa neNd:YAG, yakapetwa ka5 yakakura kunyura coefficient muhupamhi hwekunyudza bandwidth kutenderedza 808nm peak pump wavelength, inongoenderana nechiyero chepamusoro simba laser diode iripo parizvino.Izvi zvinoreva kristaro diki inogona kushandiswa kune laser, ichitungamira kune imwe compact laser system.Kune yakapihwa simba rekubuda, izvi zvinoreva zvakare yakaderera simba nhanho panoshanda laser diode, nekudaro kuwedzera hupenyu hweinodhura laser diode.Iyo yakafara yekunyudza bandwidth yeNd:YVO4 inogona kusvika 2.4 kusvika 6.3 nguva iyo yeNd:YAG.Kunze kwekunyanya kushanda nesimba kupomba, zvinoreva zvakare huwandu hwakakura hwekusarudzwa kweiyo diode yakatarwa.Izvi zvichabatsira kune vagadziri velaser system kushivirira kwakawanda kune yakaderera mutengo sarudzo.
• Nd: YVO4 crystal ine yakakura yakakurudzirwa emission cross-sections, zvose pa1064nm uye 1342nm.Kana a-axis yakachekwa Nd: YVO4 crystal yakamira pa1064m, ingangoita 4 nguva yakakwira kupfuura iyo yeNd: YAG, nepo pa1340nm iyo inokurudzirwa muchinjiko-chikamu yakakura kakapetwa ka18, inotungamira kune CW oparesheni inokunda zvachose Nd: YAG. pa1320nm.Izvi zvinoita kuti Nd:YVO4 laser ive nyore kuchengetedza mutsara wakasimba wekuburitsa pawavelengths maviri.
• Chimwe chimiro chakakosha cheNd: YVO4 lasers ndechokuti, nokuti iyo uniaxial pane yakakwirira symmetry ye cubic seNd: YAG, inongobudisa chete linearly polarized laser, nokudaro kudzivisa zvisingadiwi birefringent migumisiro pane frequency conversion.Kunyangwe hupenyu hweNd:YVO4 hupfupi zvakapetwa ka2.7 pane huya hweNd:YAG, kugona kwayo kutsetseka kunogona kunge kuchiri kwakakwira dhizaini chaiyo yelaser cavity, nekuda kwekukwirira kwayo kwepombi quantum.
Atomic Density | 1.26×1020 maatomu/cm3 (Nd1.0%) |
Crystal StructureCell Parameter | Zircon Tetragonal, nzvimbo boka D4h-I4/amd a=b=7.1193Å,c=6.2892Å |
Density | 4.22g/cm3 |
Mohs Kuoma | 4-5 (Glasi-segirazi) |
Thermal Kuwedzera Coefficient(300K) | αa=4.43×10-6/K αc=11.37×10-6/K |
Thermal Conductivity Coefficient(300K) | ∥C:0.0523W/cm/K ⊥C:0.0510W/cm/K |
Lasing wavelength | 1064nm,1342nm |
Thermal optical coefficient(300K) | dno/dT=8.5×10-6/K dne/dT=2.9×10-6/K |
Stimulated emission cross-section | 25×10-19cm2 @ 1064nm |
Fluorescent hupenyu | 90μs(1%) |
Absorption coefficient | 31.4cm-1 @810nm |
Kurasikirwa kwemukati | 0.02cm-1 @1064nm |
Wana bandwidth | 0.96nm@1064nm |
Polarized laser emission | polarization;kuenderana neakisi yemaziso (c-axis) |
Diode yakapomba maziso kune optical kunyatsoita | >60% |
Technical Parameters:
Chamfer | < λ/4 @ 633nm |
Dimensional tolerances | (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm)(L<2.5mm)(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm)(L>2.5mm) |
Aperture yakajeka | Pakati 95% |
Flatness | λ/8 @ 633 nm, λ/4 @ 633nm(tickness isingasviki 2mm) |
Surface quality | 10/5 Scratch/Dig per MIL-O-1380A |
Parallelism | nani pane 20 arc masekondi |
Perpendicularity | Perpendicularity |
Chamfer | 0.15x45deg |
Coating | 1064nm,R<0.2%;HR Coating:1064nm,R>99.8%,808nm,T>95% |