Tm: YAP Makristasi

Tm doped crystals inombundira akati wandei anoyevedza maficha anoadoma sechinhu chesarudzo kune solid-state laser sosi ine emission wavelength tunable yakatenderedza 2um.Zvakaratidzwa kuti Tm: YAG laser inogona kuderedzwa kubva 1.91 kusvika 2.15um.Saizvozvo, Tm:YAP laser inogona tuning kubva 1.85 kusvika 2.03 um.The quasi-matatu level sisitimu yeTm:doped crystals inoda yakakodzera kupomba geometry uye yakanaka kupisa kupisa kubva kune inoshanda midhiya.


  • Space group:D162h (Pnma)
  • Lattice constants(Å):a=5.307,b=7.355,c=5.176
  • Kunyungudika (℃):1850±30
  • Kunyungudika (℃):0.11
  • Kuwedzera kwekushisa (10-6·K-1): 4.3//a,10.8//b,9.5//c
  • Density(g/cm-3): 4.3//a,10.8//b,9.5//c
  • Refractive index:1.943//a,1.952//b,1.929//c pa 0.589 mm
  • Kuoma (Mohs scale):8.5-9
  • Product Detail

    Tsanangudzo

    Tm doped crystals inombundira akati wandei anoyevedza maficha anoadoma sechinhu chesarudzo kune solid-state laser sosi ine emission wavelength tunable yakatenderedza 2um.Zvakaratidzwa kuti Tm: YAG laser inogona kuderedzwa kubva 1.91 kusvika 2.15um.Saizvozvo, Tm: YAP laser inogona tuning kubva 1.85 kusvika 2.03 um. Iyo quasi-matatu level sisitimu yeTm: doped makristasi inoda yakakodzera kupomba geometry uye yakanaka kupisa kubviswa kubva kune inoshanda midhiya. Ukuwo, Tm doped zvinhu zvinobatsira kubva nguva refu yehupenyu hwefluorescence, inoyevedza kune-high-energy Q-Switched operation.Zvakare, iyo inobudirira-yekuzorora-yekuzorora pamwe nevavakidzani Tm3+ ions inoburitsa mafotoni maviri ekusimudzira ari yepamusoro laser level yeimwe yakanyura pombi photon.Izvi zvinoita kuti laser inyatsoshanda nequantum. kushanda zvakanaka kunosvika maviri uye kunoderedza kupisa kwekupisa.
    Tm:YAG uye Tm:YAP vakawana mashandisirwo azvo mumalaser ekurapa, maradhi uye kunzwa kwemuchadenga.
    Properties of Tm:YAP inotsamira pane makristasi orientation.Makristasi akachekwa achitevedza 'a' kana 'b' axis anonyanya kushandiswa.
    Zvakanakira zveTm:YAP Crysta:
    Kunyanya kushanda zvakanaka pa2μm renji kana ichienzaniswa neTm: YAG
    Linearly polarized goho danda
    Wide absorption bhendi ye4nm ichienzaniswa neTm:YAG
    Inosvikika kune 795nm neAlGaAs diode pane adsorption peak yeTm: YAG pa785nm.

    Basic Properties:

    Space group D162h (Pnma)
    Lattice constants(Å) a=5.307,b=7.355,c=5.176
    Melting point (℃) 1850±30
    Melting point (℃) 0.11
    Kuwedzera kwekushisa (10-6·K-1) 4.3//a,10.8//b,9.5//c
    Density(g/cm-3) 4.3//a,10.8//b,9.5//c
    Refractive index 1.943//a,1.952//b,1.929//katsi 0.589 mm 
    Kuoma (Mohs scale) 8.5-9

    Specifications:

    Dopant conenteation Tm: 0.2 ~ 15 pa%
    Orientation mukati me5°
    "kukanganisa kwakajeka <0.125A/inch@632.8nm
    7od saizi dhayamita 2 ~ 10mm, Kureba 2 ~ 100mm Jpon chikumbiro chemutengi
    Dimensional tolerances Diameter +0.00/-0.05mm, Kureba: ± 0.5mm
    Bharel kupera Pasi kana kukwenenzverwa
    Parallelism ≤10″
    Perpendicularity ≤5′
    Flatness ≤λ/8@632.8nm
    pamusoro Quality L0-5(MIL-0-13830B)
    Chamfer 3.15 ±0.05 mm
    AR Coating Reflectivity <0.25%